吳正信 助理教授

Jenq-Shinn Wu

Assistant Professor
Department of Electronic Engineering
National Changhua University of Education
No. 2, Shih-Da Rd., Changhua City, Taiwan 50074

Tel: 04-7232105 ext. 8358

Fax: 04-7211283
Email:
jswu@cc.ncue.edu.tw

 

NCUE EE website

學歷 (Education)

  • 國立交通大學 電子研究所 博士 (1988/9 ~ 1991/6)
  • 國立成功大學 電機工程研究所 碩士 (1986/9 ~ 1988/6)
  • 國立成功大學 電機工程學系 學士 (1982/9 ~ 1986/6)

經歷 (Experiences)

  • 博達科技新竹光電廠 研發部經理、副處長、協理、技術長 (2001/1 ~ 2004/12)
  • 國家同步輻射研究中心 副研究員 (1996/3 ~ 2000/12)
  • 美國伊利諾大學香檳分校(UIUC)物理系 訪問學者 (1994/3 ~ 1996/2)
  • 國家同步輻射研究中心 博士級專案研究助理 (1993/8 ~ 1994/3)

學術專長 (Academic Specialities)

  • 半導體微電子與光電元件
  • 磊晶技術(MBE & MOCVD)
  • 數值模擬分析
  • 半導體光譜與同步輻射能譜
  • 科學實驗系統建造

目前研究興趣 (Current Research Interests)

  • 微電子/光電半導體元件模擬設計與量測分析
  • 前瞻電晶體技術
  • 奈米尺度金屬薄膜及其氧化物研製
  • 新穎固態量子效應結構

榮譽 (Honors)

  • Phi Ta Phi榮譽會員

學術著作 (Publications)

A. 期刊論文 (Referred Papers)

  1. D.C. Wu, Y.W. Pan, J.S. Wu, S.W. Lin, and S.D. Lin, “High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate”, Appl. Phys. Lett. 108, 172403 (2016).
  2. Y.M. Lin, C.H. Chen, J.S. Wu, and C.P. Lee, “Compositional grading in GaAsSb grown on GaAs substrates”, Journal of Crystal Growth 402, 151 (2014).
  3. Y.C. Jian, D.Y. Lin, J.S. Wu, and Y.S. Huang, “Optical and electrical properties of Au- and Ag-Doped ReSe2”, Jpn. J. Appl. Phys. 52, 04CH06 (2013).
  4. J.S. Wu, Y.K. Huang, F.L. Wu, and D.Y. Lin, “Design and implementation of a versatile and variable-frequency piezoelectric coefficient measurement system”, Review of Scientific Instruments 83, 085110 (2012).
  5. J.S. Wu, C.C. Hung, C.T. Lu, and D.Y. Lin, “Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures”, Physica E, 42, 1212 (2010).
  6. D.Y. Lin, W.C. Lin, F.L. Wu, J.S. Wu, Y.T. Pan, S.L. Lee, and Y.S. Huang, ”Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance”, Phys. Stat. Sol. (a), 206, 773 (2009).
  7. D.Y. Lin, H.J. Lin, J.S. Wu, W.C. Chou, C.S. Yang, and J.S. Wang, “A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3”, J. Appl. Phys. 105, 053506 (2009).
  8. H.J. Lin, D.Y. Lin, J.S. Wu, C.S. Yang, W.C. Chou, W.H. Lo, and J.S. Wang, “Optical and electrical characterizations of ZnMnO thin films on c-Al2O3”, Jpn. J. Appl. Phys. 48, 04C112 (2009).
  9. H.J. Lin, D.Y. Lin, J.S. Wu, W.C. Chou, C.S. Yang, J.S. Wang, and W.H. Lo, “Optical characterization of ZnMnO thin films on c-Al2O3”, J. Korean Phys. Soc. 53, 98 (2008).
  10. S.L. Tsai, J.S. Wu, H.J. Lin, D.Y. Lin, and J.Y. Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, Phys. Status Solidi C 5, 2167 (2008).
  11. J.Y. Zheng, J.S. Wu, D.Y. Lin, and H.J. Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”, Phys. Status Solidi C 5, 1944 (2008).
  12. D.Y. Lin, M.C. Wu, H.J. Lin, and J.S. Wu, “Optical studies of  two-dimensional electron gas in an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, Physica E 40, 1757 (2008).     
  13. D.Y. Lin, J.D. Wu, Y.J. Chang, and J.S. Wu, “Practical and simple circuitry for the measurement of small capacitance”, Review of Scientific Instruments 78, 014703 (2007).
  14. C.K. Lin, J.C. Wu, W.K. Wang, Y.J. Chan, J.S. Wu, Y.C. Pan, C.C. Tsai, and J.T. Lai, “Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer”, IEEE Transaction on Electron Devices 51, 1214 (2004).
  15. J.C. Jan, K. Asokan, J.W. Chiou, W.F. Pong, P.K. Tseng, M.-H. Tsai, Y.K. Chang, Y.Y. Chen, J.F. Lee, J.S. Wu, H.-J Lin, C.T. Chen, L.C. Chen, F.R. Chen, and J.-K. Ho, “Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy”, Appl. Phys. Lett. 78, 2718 (2001).
  16. J.C. Jan, K. Asokan, J.W. Chiou, W.F. Pong, P.K. Tseng, L.C. Chen, F.R. Chen , J.F. Lee, J.S. Wu, H.-J Lin, and C.T. Chen, “X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN”, Journal of Synchrotron Radiation 8, 827, Part 2 (2001).
  17. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures", Solid-State Electronics 35, 723 (1992).
  18. K.H. Chang, J.S. Wu, D.G. Liu, D.C. Liou, and C.P. Lee, "High quality AlGaAs and high performance AlGaAs devices grown by molecular beam epitaxy at low temperatures", J. Material Sci.: Material in Electronics 3, 11 (1992).
  19. D.C. Liou, W.H. Chiang, C.P. Lee, K.H. Chang, D.G. Liu, J.S. Wu, and Y.K. Tu, "A novel technique for low threshold and high power InGaAs/GaAs strained-layer 0.98 mm buried heterostructure lasers fabrication", J. Appl. Phys. 71, 1552 (1991).
  20. J.S. Wu, K.H. Chang, C.P. Lee, C.Y. Chang, D.G. Liu, and D.C. Liou, "Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures", Appl. Phys. Lett. 69, 87 (1991).
  21. J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, and D.G. Liu, "Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations", Solid-State Electronics 34, 403 (1991).
  22. J.S. Wu, K.H. Chang, C.P. Lee, C.Y. Chang, D.G. Liu, and D.C. Liou, "Investigation of Indium doping and incorporation in AlGaAs/GaAs double-barrier resonant tunneling structures", Electron. Lett. 27, 428 (1991).
  23. J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, D.G. Liu, and D.C. Liou, "Characterization of improved AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors", Jpn. J. Appl. Phys. 30, L160 (1991).
  24. K.H. Chang, C.P. Lee, J.S. Wu, D.G. Liou, M.H. Wang, L.J. Chen, and M.A. Marais, "Precise determination of Al content in AlGaAs", J. Appl. Phys. 70, 4877 (1991).
  25. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons", J. Appl. Phys. 69, 1122 (1991).
  26. J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, D.G. Liu, and D.C. Liou, "Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures", Appl. Phys. Lett. 57, 2311 (1990).
  27. D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Delta-doped quantum well structures grown by molecular beam epitaxy", Appl. Phys. Lett. 57, 1887 (1990).     
  28. K.H. Chang, C.P. Lee, J.S. Wu, D.G. Liu, and D.C. Liou, "Influence of Indium doping on AlGaAs layers grown by molecular beam epitaxy", Appl. Phys. Lett. 57, 1640 (1990).
  29. D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Behavior of the first layer growth in GaAs molecular beam epitaxy", Appl. Phys. Lett. 57, 1392 (1990).
  30. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures", J. Appl. Phys. 67, 4382 (1990).
  31. C.P. Lee, K.H. Chang, D.G. Liu, and J.S. Wu, "Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy", Electronics Lett. 25, 1659 (1989).
  32. J.S. Wu, C.Y. Chang, C.P. Lee, Y.H. Wang, and F. Kai, "Origin of the enhancement of negative differential resistance at low temperature in double-barrier resonant tunneling structures", IEEE Electron Device Lett. 10, 301 (1989).

 

B. 研討會論文 (Conference Papers)

  1. W.K. Tsai and J.S. Wu, “Theoretical study of Sb-based type-I and type-II high-electron-mobility transistors with the InAs channel”, 2016 Physical Society Annual Meeting, Kaohsiung, ROC, P1-SN-073 (2016). 
  2. G.J. Lee and J.S. Wu, “Simulation and analysis of breakdown characteristics caused by impact ionization in GaN/AlGaN high-electron-mobility transistors”, 2016 Physical Society Annual Meeting, Kaohsiung, ROC, P1-SN-079 (2016).
  3. Y.T. Fan and J.S. Wu, “Simulation and analysis of the impact ionization current in InAs/AlSb type-II high-electron-mobility transistors”, 2015 Physical Society Annual Meeting, Hsinchu, ROC, P2-SN-068 (2015).
  4. J.W. Deng and J.S. Wu, “Efficiency droop in GaN light-emitting diodes caused by Auger recombination and enhanced by current crowding effect”, OPTIC 2014, Taichung, ROC, 2014-Fri-P0803-P022 (2014).
  5. Y.M. Lin, C.H. Chen, J.S. Wu and C.P. Lee, “Compositional grading in GaAsSb grown on GaAs substrates”, 2014 International Symposium on Frontiers of Technology for the Future: Low Carbon Energy and Life, Hsinchu, Taiwan (2014)
  6. K.H. Lai and J.S. Wu, “Investigation of efficiency droop in InGaN light emitting diodes due to non-radiative recombination and carrier overflow”, 2014 Physical Society Annual Meeting, Taichung, ROC, P2-OE-126 (2014).
  7. W.J. Wu and J.S. Wu, “Design and characteristics of InAs/AlAsSb composite-channel high electron mobility transistors”, 2013 Physical Society Annual Meeting, Hualien, ROC (2013).
  8. W.C. Hsu and J.S. Wu ,“Structure design of p-n junctions with constant built-in electric field”, 2013 Physical Society Annual Meeting, Hualien, ROC (2013).
  9. K.P. Lin and J.S. Wu, “Simulation of InAs/AlSb type-II high electron mobility transistors with impact ionization”, 2012 Physical Society Annual Meeting, Chiayi, ROC (2012).
  10. T.H. Hsieh and J.S. Wu, “Temperature-dependent Hall measurement of InAs/AlSb type-II high electron mobility transistors”, 2012 Physical Society Annual Meeting, Chiayi, ROC (2012).
  11. Y.F. Chen and J.S. Wu, “Raman scattering study of GaN in heterostructures grown on various sapphire substrates”, 2011 Physical Society Annual Meeting, Taipei, ROC (2011).
  12. K.C. Wu and J.S. Wu, “Simulation of multi-junction GaAs/AlGaAs solar cells”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-100 (2010).
  13. I.H. Chou and J.S. Wu, “Effects of the semiconductor template structure on electrical characteristics of graphene field-effect transistors”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-083 (2010).
  14. H.K. Lai and J.S. Wu, “Characteristic simulation of InAsSb-channel high electron mobility transistors”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-093 (2010).
  15. J.S. Wu, C.C. Hung, C.T. Lu, and D.Y. Lin, “Comparison of two-dimensional electron gas of etched and nonetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures ”, 18th International Conference on Electronic Properties of Two-Dimensional Systems, Kobe, Japan (2009).
  16. H.C. Tang and J.S. Wu, “Simulation of short channel effect of In0.2Ga0.8As/GaAs MOSFET with high-k Al2O3 gate dielectrics”, 2009 Physical Society Annual Meeting, Changhua, ROC, PB-68 (2009).
  17. W.J. Hsueh and J.S. Wu, “Simulation of enhancement-mode In0.53Ga0.47As-channel MOSFET with different high-k dielectric materials”, 2009 Physical Society Annual Meeting, Changhua, ROC, PB-70 (2009).
  18. Y.H. Huang and J.S. Wu, “Characterization of MOCVD-grown GaN films by high-resolution x-ray diffraction”, Physical Society Annual Meeting, Changhua, ROC, PB-74 (2009).
  19. H.J. Lin, D.Y. Lin, J.S. Wu, C.S. Yang, W.C. Chou, W.H. Lo, and J.S. Wang, “Optical and electrical characterizations of ZnMnO thin films on c-Al2O3”, International Conference on Solid State Devices and Material, Tsukuba, Japan, 556 (2008).
  20. Y.M. Lin, J.S. Wu, S.H. Ke, S.D. Lin, and C.P. Lee, “Evolution of surface morphology of InAs monolayers grown on GaAsSb”, MBE-Taiwan 2008, Hsinchu, ROC (2008).
  21. S.H. Ke and J.S. Wu, “Reciprocal space mapping of high-resolution x-ray diffraction for InAlAs/InGaAs metamorphic high electron mobility transistors”, Physical Society Annual Meeting, Hsinchu, ROC, PB-55 (2008).
  22. C.P. Liu and J.S. Wu, “Potential energy spike-free InP/InGaAsSb/InP double heterojunction bipolar transistors”, Physical Society Annual Meeting, Hsinchu, ROC, PB-54 (2008).
  23. J.S. Wu and J.H. Tsen, “Effect of doping ratio on device characteristics of double d-doped In0.52Al0.48As/In0.53Ga0.47As HEMTs”, International Electron Devices and Material Symposia, Hsinchu, ROC (2007).
  24. J.Y. Zheng, J.S. Wu, D.Y. Lin, and H.J. Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”,  7th International Conference on Nitride Semiconductors, Las Vegas, USA (2007).
  25. S.L. Tsai, J.S. Wu, H.J. Lin, D.Y. Lin, and J.Y. Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, 7th International Conference on Nitride Semiconductors, Las Vegas, USA (2007).
  26. J.H. Tsen and J.S. Wu, “Effect of double delta doping and uniform doping on device characteristics of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors”, Physical Society Annual Meeting, Jhongli, ROC, 263 (2007).
  27. J. S. Wu and J. H. Tsen, “Critical growth temperature of metamorphic buffer layer for low pinch-off leakage InAlAs/InGaAs HEMTs on GaAs substrates”, International Electron Devices and Material Symposia, Tainan, ROC, 170 (2006).
  28. M. C. Wu, J. D. Wu, H. J. Lin, J. S. Wu and D. Y. Lin, “Photoreflectance and photoluminescence investigations of InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, International Electron Devices and Material Symposia, Tainan, ROC, 117 (2006).
  29. C.K. Lin, J.C. Wu, Y.J. Chan, J.S. Wu, Y.C. Pan, C.C. Tsai, and J.T. Lai, “Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design”, Proceedings of International Symposium on Compound Semiconductors, Korea, 184, 287 (2004).
  30. N. Hayafuji, Y.Y. Chen, J.S. Wu, J.T. Lai, and C.K. Peng, “Epitaxial manufacturing outlook for microwave industry” (Invited), International Conference on Solid State Devices and Material, Nagoya, Japan, 114 (2002).
  31. H. J. Lin, J.L. Chen, J. S. Wu, D.J. Huang, M. Yuri, H.H. Hung, J.G. Zhao, G.Y. Guo, and C.T. Chen, “Anisotropic magnetostriction in Tb1-xDyxFe2”, American Physical Society March Meeting, USA (1999).
  32. D. J. Huang, C.Y. Liang, D.Y. Li, H. J. Lin, J. S. Wu, M. Yuri, C.T. Chen, S.C. Law, and C.C. Chi, “Electronics structure of manganese perovskite thin film studied by photoemission and soft-x-ray emission”, American Physical Society March Meeting, USA (1999).
  33. D. J. Huang, M. Yuri, C. T. Chen, H. J. Lin, J. S. Wu, and P. D. Johnson, “Mott spin polarization analyzer for spin-polarized photoemission”, SRRC Users’ Meeting, Taiwan (1997).
  34. D.C. Liou, J.S. Tsang, C.P. Lee, K.H. Chang, D.G. Liu and J.S. Wu, "Low threshold AlGaAs/GaAs graded-index separated confinement heterostructure single quantum well lasers grown by molecular beam epitaxy", International EDMS, ROC, (1990).
  35. D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Enhanced carriers confinement of a delta-doping quantum well structures grown by a molecular beam epitaxy", Materials Research Society, Fall Meeting,  USA, (1990).
  36. D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Carrier distribution in quantum well structures with delta-doping grown by a molecular beam epitaxy", International EDMS, ROC, (1990).
  37. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures", IEEE International Electron Devices Meeting, USA, 343 (1990).
  38. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Effect of electrode doping concentration on electrical characteristics of double-barrier resonant tunneling structures", International Electron Devices and Material Symposium, ROC, 464 (1990).
  39. J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, and D.G. Liu, "Repetitive negative differential resistance in serially connected double-barrier resonant tunneling structures", Electron Devices and Materials Circuit Technology Symposium, ROC, 263 (1989).

 

C. 技術報告 (Technical Reports)

1.       吳正信,“變晶式砷化銦鎵/砷化銦鋁高頻微波磊晶片技術開發計畫, 經濟部業界開發產業技術計劃, 91-EC-2-A-17-0285-029 (2004).

2.       J.S. Wu, H.J. Lin, M. Yuri, C.T. Chen, F. Studer, and O. Toulemonde, “Soft-x-ray magnetic circular dichroism induced by Ni doping in Pr0.5Ca0.5Mn1-xNixO3 manganese perovskites”, SRRC Annual Report, Taiwan (1999).