吳正信 助理教授
Jenq-Shinn Wu
Assistant Professor
Department of Electronic Engineering
National Changhua University of Education
No. 2, Shi-Da Rd., Changhua City, Taiwan 50074
Tel: 04-7232105 ext. 8358
Fax: 04-7211283
Email: jswu@cc.ncue.edu.tw

NCUE EE website

學歷 (Education)

  • 國立交通大學 電子研究所 博士
  • 國立成功大學 電機工程研究所 碩士
  • 國立成功大學 電機工程學系 學士

經歷 (Experiences)

  • 博達科技新竹光電廠 研發部經理、副處長、協理、技術長
  • 國家同步輻射研究中心 副研究員
  • 美國伊利諾大學香檳分校(UIUC)物理系 訪問學者
  • 國家同步輻射研究中心 博士級專案研究助理

學術專長 (Academic Specialities)

  • 半導體微電子與光電元件
  • 磊晶技術(MBE & MOCVD)
  • 數值模擬分析
  • 半導體光譜與同步輻射能譜

目前研究興趣 (Current Research Interests)

  • 高結晶性鋁奈米薄膜
  • 新穎電晶體
  • 奈米尺度金屬/介電質量子效應結構  

榮譽 (Honor)

  • Phi Ta Phi榮譽會員

學術著作 (Publications)
A. 期刊論文 (Referred Papers)

  • Y.T. Fan, M.C. Lo, C.C. Wu, P.Y. Chen, J.S. Wu, C.T. Liang, and S.D. Lin, “Atomic-scale epitaxial aluminum film on GaAs substrate”, AIP Advances 7, 075213 (2017).
  • D.C. Wu, Y.W. Pan, J.S. Wu, S.W. Lin, and S.D. Lin, “High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate”, Appl. Phys. Lett. 108, 172403 (2016).
  • Y.G. Li, D.Y. Lin, T.S. Ko, J.S. Wu, C.H. Wu, Y.L. Tsai, M.C. Kao, and H.Z. Chen, “Optical characterization of GaInP p-i-n solar cells”, Jpn. J. Appl. Phys. 54, 04DR06 (2015).
  • Y.M. Lin, C.H. Chen, J.S. Wu, and C.P. Lee, “Compositional grading in GaAsSb grown on GaAs substrates”, Journal of Crystal Growth 402, 151 (2014).
  • Y.C. Jian, D.Y. Lin, J.S. Wu, and Y.S. Huang, “Optical and electrical properties of Au- and Ag-Doped ReSe2”, Jpn. J. Appl. Phys. 52, 04CH06 (2013).
  • J.S. Wu, Y.K. Huang, F.L. Wu, and D.Y. Lin, “Design and implementation of a versatile and variable-frequency piezoelectric coefficient measurement system”, Review of Scientific Instruments 83, 085110 (2012).
  • J.S. Wu, C.C. Hung, C.T. Lu, and D.Y. Lin, “Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures”, Physica E, 42, 1212 (2010).
  • D.Y. Lin, W.C. Lin, F.L. Wu, J.S. Wu, Y.T. Pan, S.L. Lee, and Y.S. Huang, ”Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance”, Phys. Stat. Sol. (a), 206, 773 (2009).
  • D.Y. Lin, H.J. Lin, J.S. Wu, W.C. Chou, C.S. Yang, and J.S. Wang, “A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3”, J. Appl. Phys. 105, 053506 (2009).
  • H.J. Lin, D.Y. Lin, J.S. Wu, C.S. Yang, W.C. Chou, W.H. Lo, and J.S. Wang, “Optical and electrical characterizations of ZnMnO thin films on c-Al2O3”, Jpn. J. Appl. Phys. 48, 04C112 (2009).
  • H.J. Lin, D.Y. Lin, J.S. Wu, W.C. Chou, C.S. Yang, J.S. Wang, and W.H. Lo, “Optical characterization of ZnMnO thin films on c-Al2O3”, J. Korean Phys. Soc. 53, 98 (2008).
  • S.L. Tsai, J.S. Wu, H.J. Lin, D.Y. Lin, and J.Y. Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, Phys. Status Solidi C 5, 2167 (2008).
  • J.Y. Zheng, J.S. Wu, D.Y. Lin, and H.J. Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”, Phys. Status Solidi C 5, 1944 (2008).
  • D.Y. Lin, M.C. Wu, H.J. Lin, and J.S. Wu, “Optical studies of  two-dimensional electron gas in an InGaAs/AlGaAs pseudomorphic high electron mobility transistor structure”, Physica E 40, 1757 (2008).     
  • D.Y. Lin, J.D. Wu, Y.J. Chang, and J.S. Wu, “Practical and simple circuitry for the measurement of small capacitance”, Review of Scientific Instruments 78, 014703 (2007).
  • C.K. Lin, J.C. Wu, W.K. Wang, Y.J. Chan, J.S. Wu, Y.C. Pan, C.C. Tsai, and J.T. Lai, “Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer”, IEEE Transaction on Electron Devices 51, 1214 (2004).
  • J.C. Jan, K. Asokan, J.W. Chiou, W.F. Pong, P.K. Tseng, M.-H. Tsai, Y.K. Chang, Y.Y. Chen, J.F. Lee, J.S. Wu, H.-J Lin, C.T. Chen, L.C. Chen, F.R. Chen, and J.-K. Ho, “Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy”, Appl. Phys. Lett. 78, 2718 (2001).
  • J.C. Jan, K. Asokan, J.W. Chiou, W.F. Pong, P.K. Tseng, L.C. Chen, F.R. Chen , J.F. Lee, J.S. Wu, H.-J Lin, and C.T. Chen, “X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN”, Journal of Synchrotron Radiation 8, 827, Part 2 (2001).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures", Solid-State Electronics 35, 723 (1992).
  • K.H. Chang, J.S. Wu, D.G. Liu, D.C. Liou, and C.P. Lee, "High quality AlGaAs and high performance AlGaAs devices grown by molecular beam epitaxy at low temperatures", J. Material Sci.: Material in Electronics 3, 11 (1992).
  • D.C. Liou, W.H. Chiang, C.P. Lee, K.H. Chang, D.G. Liu, J.S. Wu, and Y.K. Tu, "A novel technique for low threshold and high power InGaAs/GaAs strained-layer 0.98 mm buried heterostructure lasers fabrication", J. Appl. Phys. 71, 1552 (1991).
  • J.S. Wu, K.H. Chang, C.P. Lee, C.Y. Chang, D.G. Liu, and D.C. Liou, "Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures", Appl. Phys. Lett. 69, 87 (1991).
  • J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, and D.G. Liu, "Electrical characteristics of double-barrier resonant tunneling structures with different electrode doping concentrations", Solid-State Electronics 34, 403 (1991).
  • J.S. Wu, K.H. Chang, C.P. Lee, C.Y. Chang, D.G. Liu, and D.C. Liou, "Investigation of Indium doping and incorporation in AlGaAs/GaAs double-barrier resonant tunneling structures", Electron. Lett. 27, 428 (1991).
  • J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, D.G. Liu, and D.C. Liou, "Characterization of improved AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors", Jpn. J. Appl. Phys. 30, L160 (1991).
  • K.H. Chang, C.P. Lee, J.S. Wu, D.G. Liou, M.H. Wang, L.J. Chen, and M.A. Marais, "Precise determination of Al content in AlGaAs", J. Appl. Phys. 70, 4877 (1991).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons", J. Appl. Phys. 69, 1122 (1991).
  • J.S. Wu, C.Y. Chang, C.P. Lee, K.H. Chang, D.G. Liu, and D.C. Liou, "Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures", Appl. Phys. Lett. 57, 2311 (1990).
  • D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Delta-doped quantum well structures grown by molecular beam epitaxy", Appl. Phys. Lett. 57, 1887 (1990).     
  • K.H. Chang, C.P. Lee, J.S. Wu, D.G. Liu, and D.C. Liou, "Influence of Indium doping on AlGaAs layers grown by molecular beam epitaxy", Appl. Phys. Lett. 57, 1640 (1990).
  • D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Behavior of the first layer growth in GaAs molecular beam epitaxy", Appl. Phys. Lett. 57, 1392 (1990).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures", J. Appl. Phys. 67, 4382 (1990).
  • C.P. Lee, K.H. Chang, D.G. Liu, and J.S. Wu, "Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy", Electronics Lett. 25, 1659 (1989).
  • J.S. Wu, C.Y. Chang, C.P. Lee, Y.H. Wang, and F. Kai, "Origin of the enhancement of negative differential resistance at low temperature in double-barrier resonant tunneling structures", IEEE Electron Device Lett. 10, 301 (1989).

B. 研討會論文 (Conference Papers)

  • Y.H. Wu, J.S. Wu, Y.T. Fan and T.S.Ko, “Post-growth annealing of quasi-epitaxial aluminum thin film grown on sapphire by molecular beam epitaxy”, International Thin Films Conference TACT 2017, Hualien, Taiwan, C-P-0261 (2017).
  • C.C. Wang and J.S. Wu, “Holes responsible for substantial difference in impact ionization current between Type-I and Type-II structures for Sb-based InAs-channel high-electron-mobility transistors”, 2017 Physical Society Annual Meeting, New Taipei City, ROC, P1-SN-045 (2017).
  • H.W. Wang and J.S. Wu, “Annealing effect on crystallinity and surface morphology of epitaxial Al(111) grown on sapphire”, 2017 Physical Society Annual Meeting, New Taipei City, ROC, P1-SS-013 (2017).
  • W.K. Tsai and J.S. Wu, “Theoretical study of Sb-based type-I and type-II high-electron-mobility transistors with the InAs channel”, 2016 Physical Society Annual Meeting, Kaohsiung, ROC, P1-SN-073 (2016). 
  • G.J. Lee and J.S. Wu, “Simulation and analysis of breakdown characteristics caused by impact ionization in GaN/AlGaN high-electron-mobility transistors”, 2016 Physical Society Annual Meeting, Kaohsiung, ROC, P1-SN-079 (2016).
  • Y.T. Fan and J.S. Wu, “Simulation and analysis of the impact ionization current in InAs/AlSb type-II high-electron-mobility transistors”, 2015 Physical Society Annual Meeting, Hsinchu, ROC, P2-SN-068 (2015).
  • J.W. Deng and J.S. Wu, “Efficiency droop in GaN light-emitting diodes caused by Auger recombination and enhanced by current crowding effect”, OPTIC 2014, Taichung, ROC, 2014-Fri-P0803-P022 (2014).
  • Y.M. Lin, C.H. Chen, J.S. Wu and C.P. Lee, “Compositional grading in GaAsSb grown on GaAs substrates”, 2014 International Symposium on Frontiers of Technology for the Future: Low Carbon Energy and Life, Hsinchu, Taiwan (2014)
  • K.H. Lai and J.S. Wu, “Investigation of efficiency droop in InGaN light emitting diodes due to non-radiative recombination and carrier overflow”, 2014 Physical Society Annual Meeting, Taichung, ROC, P2-OE-126 (2014).
  • W.J. Wu and J.S. Wu, “Design and characteristics of InAs/AlAsSb composite-channel high electron mobility transistors”, 2013 Physical Society Annual Meeting, Hualien, ROC (2013).
  • W.C. Hsu and J.S. Wu ,“Structure design of p-n junctions with constant built-in electric field”, 2013 Physical Society Annual Meeting, Hualien, ROC (2013).
  • K.P. Lin and J.S. Wu, “Simulation of InAs/AlSb type-II high electron mobility transistors with impact ionization”, 2012 Physical Society Annual Meeting, Chiayi, ROC (2012).
  • T.H. Hsieh and J.S. Wu, “Temperature-dependent Hall measurement of InAs/AlSb type-II high electron mobility transistors”, 2012 Physical Society Annual Meeting, Chiayi, ROC (2012).
  • Y.F. Chen and J.S. Wu, “Raman scattering study of GaN in heterostructures grown on various sapphire substrates”, 2011 Physical Society Annual Meeting, Taipei, ROC (2011).
  • K.C. Wu and J.S. Wu, “Simulation of multi-junction GaAs/AlGaAs solar cells”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-100 (2010).
  • I.H. Chou and J.S. Wu, “Effects of the semiconductor template structure on electrical characteristics of graphene field-effect transistors”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-083 (2010).
  • H.K. Lai and J.S. Wu, “Characteristic simulation of InAsSb-channel high electron mobility transistors”, 2010 Physical Society Annual Meeting, Tainan, ROC, BP-093 (2010).
  • J.S. Wu, C.C. Hung, C.T. Lu, and D.Y. Lin, “Comparison of two-dimensional electron gas of etched and nonetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures ”, 18th International Conference on Electronic Properties of Two-Dimensional Systems, Kobe, Japan (2009).
  • H.C. Tang and J.S. Wu, “Simulation of short channel effect of In0.2Ga0.8As/GaAs MOSFET with high-k Al2O3 gate dielectrics”, 2009 Physical Society Annual Meeting, Changhua, ROC, PB-68 (2009).
  • W.J. Hsueh and J.S. Wu, “Simulation of enhancement-mode In0.53Ga0.47As-channel MOSFET with different high-k dielectric materials”, 2009 Physical Society Annual Meeting, Changhua, ROC, PB-70 (2009).
  • Y.H. Huang and J.S. Wu, “Characterization of MOCVD-grown GaN films by high-resolution x-ray diffraction”, Physical Society Annual Meeting, Changhua, ROC, PB-74 (2009).
  • H.J. Lin, D.Y. Lin, J.S. Wu, C.S. Yang, W.C. Chou, W.H. Lo, and J.S. Wang, “Optical and electrical characterizations of ZnMnO thin films on c-Al2O3”, International Conference on Solid State Devices and Material, Tsukuba, Japan, 556 (2008).
  • Y.M. Lin, J.S. Wu, S.H. Ke, S.D. Lin, and C.P. Lee, “Evolution of surface morphology of InAs monolayers grown on GaAsSb”, MBE-Taiwan 2008, Hsinchu, ROC (2008).
  • S.H. Ke and J.S. Wu, “Reciprocal space mapping of high-resolution x-ray diffraction for InAlAs/InGaAs metamorphic high electron mobility transistors”, Physical Society Annual Meeting, Hsinchu, ROC, PB-55 (2008).
  • C.P. Liu and J.S. Wu, “Potential energy spike-free InP/InGaAsSb/InP double heterojunction bipolar transistors”, Physical Society Annual Meeting, Hsinchu, ROC, PB-54 (2008).
  • J.S. Wu and J.H. Tsen, “Effect of doping ratio on device characteristics of double d-doped In0.52Al0.48As/In0.53Ga0.47As HEMTs”, International Electron Devices and Material Symposia, Hsinchu, ROC (2007).
  • J.Y. Zheng, J.S. Wu, D.Y. Lin, and H.J. Lin, “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”,  7th International Conference on Nitride Semiconductors, Las Vegas, USA (2007).
  • S.L. Tsai, J.S. Wu, H.J. Lin, D.Y. Lin, and J.Y. Zheng, “Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications”, 7th International Conference on Nitride Semiconductors, Las Vegas, USA (2007).
  • J.H. Tsen and J.S. Wu, “Effect of double delta doping and uniform doping on device characteristics of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors”, Physical Society Annual Meeting, Jhongli, ROC, 263 (2007).
  • J. S. Wu and J. H. Tsen, “Critical growth temperature of metamorphic buffer layer for low pinch-off leakage InAlAs/InGaAs HEMTs on GaAs substrates”, International Electron Devices and Material Symposia, Tainan, ROC, 170 (2006).
  • M. C. Wu, J. D. Wu, H. J. Lin, J. S. Wu and D. Y. Lin, “Photoreflectance and photoluminescence investigations of InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures”, International Electron Devices and Material Symposia, Tainan, ROC, 117 (2006).
  • C.K. Lin, J.C. Wu, Y.J. Chan, J.S. Wu, Y.C. Pan, C.C. Tsai, and J.T. Lai, “Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design”, Proceedings of International Symposium on Compound Semiconductors, Korea, 184, 287 (2004).
  • N. Hayafuji, Y.Y. Chen, J.S. Wu, J.T. Lai, and C.K. Peng, “Epitaxial manufacturing outlook for microwave industry” (Invited), International Conference on Solid State Devices and Material, Nagoya, Japan, 114 (2002).
  • H. J. Lin, J.L. Chen, J. S. Wu, D.J. Huang, M. Yuri, H.H. Hung, J.G. Zhao, G.Y. Guo, and C.T. Chen, “Anisotropic magnetostriction in Tb1-xDyxFe2”, American Physical Society March Meeting, USA (1999).
  • D. J. Huang, C.Y. Liang, D.Y. Li, H. J. Lin, J. S. Wu, M. Yuri, C.T. Chen, S.C. Law, and C.C. Chi, “Electronics structure of manganese perovskite thin film studied by photoemission and soft-x-ray emission”, American Physical Society March Meeting, USA (1999).
  • D. J. Huang, M. Yuri, C. T. Chen, H. J. Lin, J. S. Wu, and P. D. Johnson, “Mott spin polarization analyzer for spin-polarized photoemission”, SRRC Users’ Meeting, Taiwan (1997).
  • D.C. Liou, J.S. Tsang, C.P. Lee, K.H. Chang, D.G. Liu and J.S. Wu, "Low threshold AlGaAs/GaAs graded-index separated confinement heterostructure single quantum well lasers grown by molecular beam epitaxy", International EDMS, ROC, (1990).
  • D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Enhanced carriers confinement of a delta-doping quantum well structures grown by a molecular beam epitaxy", Materials Research Society, Fall Meeting,  USA, (1990).
  • D.G. Liu, C.P. Lee, K.H. Chang, J.S. Wu, and D.C. Liou, "Carrier distribution in quantum well structures with delta-doping grown by a molecular beam epitaxy", International EDMS, ROC, (1990).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures", IEEE International Electron Devices Meeting, USA, 343 (1990).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, D.G. Liu, and D.C. Liou, "Effect of electrode doping concentration on electrical characteristics of double-barrier resonant tunneling structures", International Electron Devices and Material Symposium, ROC, 464 (1990).
  • J.S. Wu, C.P. Lee, C.Y. Chang, K.H. Chang, and D.G. Liu, "Repetitive negative differential resistance in serially connected double-barrier resonant tunneling structures", Electron Devices and Materials Circuit Technology Symposium, ROC, 263 (1989).

C. 技術報告 (Technical Reports)

  • 吳正信,“變晶式砷化銦鎵/砷化銦鋁高頻微波磊晶片技術開發計畫”, 經濟部業界開發產業技術計劃, 91-EC-2-A-17-0285-029 (2004).
  • J.S. Wu, H.J. Lin, M. Yuri, C.T. Chen, F. Studer, and O. Toulemonde, “Soft-x-ray magnetic circular dichroism induced by Ni doping in Pr0.5Ca0.5Mn1-xNixO3 manganese perovskites”, SRRC Annual Report, Taiwan (1999).