Tsung-Shine Ko
¬_©v¾Ë±Ð±Â­Ý¥ô°ê»Ú±M­×³¡¥D¥ô
Professor
Dept. of Electronic Engineering,
National Changhua University of Education,
2,Shih-Da Rd., Changhua City, Taiwan 50074

Tel: 04-7232105 #8367

Fax: 04-7211283
Email :
tsko@cc.ncue.edu.tw

¯Á¤Þ:

Professional biography
Education
Research Interests
Experiences
Academic performance

Professional biography sketch

Tsung-Shine Ko, born in Tainan, Taiwan, graduated from Tainan First Senior High School. He received his B.S. degree in Physics from National Changhua University of Education in 2001. After serving as a trainee teacher in high school for one year, he received his M.S. degree in Atomic Science from National Tsing Hua University in 2004. In 2009, he obtained his Ph.D. degree in Photonics from National Chiao Tung University. During his Ph.D. studies, he participated in the Graduate Student Study Abroad Program and joined Prof. Han's Nitride Group at Yale University, conducting relevant research. From 2010 to 2013, he worked for AIXTRON as a process engineer, where he was responsible for various main projects, including advanced optoelectronics development and MOCVD epitaxial stability. Since 2013, he has been serving as an assistant professor at National Changhua University of Education in Taiwan. Currently, he has been leading multiple research projects funded by the National Science Council and the Ministry of Education in Taiwan. His research interests primarily include advanced nano-optoelectronic materials (2D materials, wide-bandgap materials, compound semiconductors, Si/Ge), energy-efficient optoelectronic devices, surface and material analysis techniques, and their novel applications. In terms of teaching, he focuses on research related to the use of the latest technology to develop innovative teaching methods for improving teaching quality and student learning outcomes.

¾Ç¾ú (Education)

  • °ê¥ß¥æ³q¤j¾Ç¥ú¹q¤uµ{³Õ¤h

¬ã¨s±Mªø»P¿³½ì (Research Interests)

  • ¤T¤­±Ú¥b¾ÉÅé(LED/Laser/HEMT) MOCVD½U´¹¦¨ªø§Þ³N
  • °ª®Ä²v¥ú¹q¥b¾ÉÅ餸¥ó³]­p
  • ·s¿o©`¦Ì¥ú¹q§÷®Æ»P¤¸¥ó¬ãµo
  • ªí­±¬ì¾Ç¡B§÷®Æ¤ÀªR»P¥ú¹q¶q´ú§Þ³N
  • ¥ú¹q¡B¥ÍÂå·P´úÀ³¥Î¬ã¨s

¸g¾ú (Experiences)

  • ¼w°êAIXTRON»sµ{¤uµ{®v
  • ¬ü°ê­C¾|¤j¾Ç¹q¾÷¤uµ{¾Ç¨t(¤d¨½°¨­p¹º)

¾Ç³Nªí²{ (Academic performance)

A. Research projects

°ê¬ì·|¤@¯ë«¬­pµe(«e¬ì§Þ³¡­pµe)

  112¦~«× ¡u»s³Æ¥ú¹q¶Ê¤Æ¬¡©Ê¤§ª÷/»È/ºÒ/¤G²¸¤Æ໩`¦Ì½Æ¦X§÷®ÆÀ³¥Î©óÀË´ú¤Î­°¸ÑÀô¹Ò¼Ë«~¤¤¥Ø¼Ð¦Ã¬Vª«(1/2)¡v¦@¦P¥D«ù¤H

  111¦~«× ¡u¤G²¸¤Æ໹p®gÁ¡¤Æ§Y®É«p«×ºÊ±±¨t²Î¡v­pµe¥D«ù¤H

  110¦~«×¡u¥H°ª¥úÃÐÅã·L³N§Y®ÉºÊ±±¤Gºû§÷®Æ¤§¤Æ¾Ç®ð¬Û¨I¿n¦¨ªø¡v¦@¦P¥D«ù¤H

  109¦~«×¡u§Q¥Î¹q¤l§ô·L¼v»s§@¹Ï®×¤Æ¹q·¥»P©`¦Ì¬Wµ²ºc¥H´£°ª¤G²¸¤Æ໥úÅTÀ³¤§¬ã¨s¡v­pµe¥D«ù¤H

  108¦~«×¡u¹L´çª÷Äݲ¸¤Æª«§C·Å¯uªÅ¤j­±¿n¹p®g°h¤õ»PÁ¡¤Æ¨t²Î¶}µo¡v­pµe¥D«ù¤H

  106¦~«×¡u§Q¥Î¹p®gÁ¡¤Æ»s§@¤£¦PºUÂø¤¸¯À¤§¤G²¸¤Æà»­ì¤l¼h¡v­pµe¥D«ù¤H

  105¦~«×¡uºUÂøª«»P¹q·¥©ó¤G²¸¤Æ໤§¥ú¹q¯S©Ê¼vÅT»P¨ä¥ú°»´ú¾¹À³¥Î¡v­pµe¥D«ù¤H

  104¦~«×¡u§Q¥Î¤Æ¾Ç®ð¬Û¶Ç¿éªk¦¨ªø¤Gºû¹L´çª÷Äݲ¸¤Æª«¡v­pµe¥D«ù¤H

  102¦~«×¡u¤T±Ú®ñ¤Æª«¼e¯à»Ø¥b¾ÉÅé§÷®Æ¤¸¥ó¤§¥ú¹q¯S©Ê¬ã¨s¡v­pµe¥D«ù¤H

 

±Ð¨|³¡±Ð¾Ç¹ê½î¬ã¨s­pµe

  111¦~«× ¡u«á¬Ì±¡®É´Á¹q¸ô¾ÇPBL±Ð¾Çµ¦²¤»P¦¨®Ä¤ÀªR¡v­pµe¥D«ù¤H

  110¦~«× ¡u§Q¥ÎLINEªÀ¸s³nÅéµ²¦X°ÝÃD¾É¦V¾Ç²ßªk¿Ä¤J¹q¸ô¾Ç±Ð¾Ç¤§¬ã¨s¡v­pµe¥D«ù¤H

 

B. Recent publications

  Tsung-Shine Ko* (Corresponding author), Yen-Lun Chen, Jiann Shieh, Szu-Hung Chen, Jing-Yang Syu, Guan-Long Chen ¡§Hydrophobic Si nanopillar array coated with few-layer MoS2 films for surface-enhanced Raman scattering¡¨ Journal of Vacuum Science & Technology A, 41, 033106 (2023) SCI / IF=3.234 / Ranking=20/57, Q2 in ¡§Surfaces, Coatings and Films¡¨ category. This paper was chosen to be promoted as an Editor¡¦s Pick.

  Tsung-Shine Ko* (Corresponding author), En-Ting Lin, Yen-Teng Ho, Chen-An Deng ¡§The Role of GaN in the Heterostructure WS2/GaN for SERS Applications¡¨ Materials 16, 3054 (2023) SCI / IF=3.748 / Ranking=18/79, Q1 in ¡§Metallurgy & Metallurgical Engineering¡¨ category.

  Tsung-Shine Ko* (Corresponding author), Kai-Yuan Kuo ¡§Using a Au/pitted a-plane GaN substrate to aggregate polar molecules for highly efficient surface-enhanced Raman scattering¡¨ The Journal of Chemical Physics, 157, 114702 (2022) SCI / IF=4.304, Q1 in ¡§PHYSICS, ATOMIC, MOLECULAR & CHEMICAL¡¨ category.

  Tsung-Shine Ko, En-Ting Lin, Xin-Wen Huang, Po-Tang Wu, Yi-Lin Yang ¡§High-Temperature Coefficient of Resistance in MoxW1-xS2 Thin Film¡¨ Applied Sciences, 12, 5110 (2022) SCI / IF=2.838, Q2 in ¡§ENGINEERING, MULTIDISCIPLINARY¡¨ category.

  Tsung-Shine Ko* (Corresponding author), Yen-Lun Chen ¡§Hybrid enhancement of surface-enhanced Raman scattering using few-layer MoS2 decorated with Au nanoparticles on Si nanosquare holes¡¨ Nanomaterials 12, 786 (2022) SCI / IF=5.719, Q1 in ¡§PHYSICS, APPLIED¡¨ category.

  Tsung-Shine Ko* (Corresponding author), Han-Yuan Liu, Jiann Shieh, De Shieh, Szu-Hung Chen, Yen-Lun Chen and En-Ting Lin, ¡§Using Si/MoS2 Core-Shell Nanopillar Arrays Enhances SERS Signal¡¨ Nanomaterials 11, 733 (2021) SCI / IF=5.719, Q1 in ¡§PHYSICS, APPLIED¡¨ category.

 

C. Others

Please check my personal ORCID link:  https://orcid.org/0000-0003-4974-7749